22-nm Graphene nanowires below HSQ resist. Shown are four metal electrodes with 10 parallel ribbons between each pair of electrodes. The four-point configuration allows for extraction of contact resistance while the middle device is used to extract nanowire properties.
A side-gated graphene transistor: the graphene is below PMMA resist that is imaged here. The channel width is on the order of 20-nm.
A cross-section of ZEP-resist on a Silicon wafer. The patterns are obtained using a 100 kV electron beam lithography system.
AFM image showing blazed diffractive gratings in PMMA resist. A Grayscale lithography process was developed using PMMA resist on various substrates.
Nano-gap to study if SERS (surface enhanced Raman scattering) can be used for single-molecule detection. The metal triangles are made mostly of Gold with a thin layer of adhesion metal below them.
