Raghunath Murali

Dr. Murali’s research is currently focused on graphene devices. His interests include graphene devices, graphene interconnects, and post-CMOS technology. Below is a list of recent publications.

Journal Publications

1. R. Murali, K. Brenner, Y. Yang, T. Beck, J.D. Meindl, “Resistivity of Graphene Nanoribbon Interconnects,” accepted for publication in IEEE Electron Device Letters.

2. C. Tabor, R. Murali, M. Mahmoud, M. El-Sayed, “On the use of plasmonic nanoparticle pairs as a plasmon ruler: The dependence of the near-field dipole plasmon coupling on nanoparticle size and shape,” Journal of Physical Chemistry A 2009, 113, 1946-1953.

3. R. Murali, “Mitigation of Microloading Effect in Nanoimprint Mask Fabrication,” Journal of Vacuum Science and Technology B, vol. 26, no. 1, pp. 167-9, Jan. 2009.

4. S. Sassine, Yu. Krupko, Z.D. Kvon, J.C. Portal, R. Murali, K.P. Martin, G. Hill and A.D. Wieck, “Polarized-microwave control of directed transport in a 2D electron gas with artificial symmetrical scatterers,” Physica E 40, 2043 (2008).

5. S. Sassine, Yu. Krupko, J.C. Portal, Z.D. Kvon, R. Murali, K.P. Martin, G. Hill and A.D. Wieck, “Experimental investigation of the ratchet effect in a two-dimensional electron system with broken spatial inversion symmetry,” Phys. Rev. B 78, 045431 (2008).

6. R. Murali, J.D. Meindl, “Modeling the Effect of Source/Drain Junction Depth on Bulk MOSFET Scaling,” Solid State Electronics, vol. 51, no. 6, pp. 823-827, June 2007.

7. R. Murali, D.K. Brown, K.P. Martin, J.D. Meindl, “Improving electron beam resist sensitivity by preexposure to deep ultraviolet radiation,” Journal of Vacuum Science and Technology B, vol. 25, no. 6, pp. 2064-2067, Dec. 2007.

8. R. Murali, “Metrology for Grayscale Lithography,” Proceedings of the International Conference on Frontiers of Characterization and Metrology for Nanoelectronics, pp. 419-22, American Institute of Physics, Sept. 2007.

9. R. Murali, D.K. Brown, K.P. Martin, J.D. Meindl, “Process Optimization and Proximity Effect Correction for Grayscale E-beam Lithography,” Journal of Vacuum Science and Technology B, vol. 24, no. 6, pp. 2936-2939, Dec. 2006.

10. R. Murali, B. L. Austin, L, Wang, and J. D. Meindl, “Short Channel Modeling of Bulk Accumulation MOSFETs,” IEEE Transactions on Electron Devices, vol. 51, no. 6, pp. 940-947, June 2004.

Conferences with Proceedings

11. R. Murali, “Mitigation of Microloading Effect in Nanoimprint Mask Fabrication,” Proceedings of the Electron, Ion, Photon Beam and Nanotechnology Conference, May 2008, Portland, OR.

12. W.A. de Heer, C. Berger, E. Conrad, P. First, R. Murali, and J.D. Meindl, “Pionics: the Emerging Science and Technology of Graphene-based Nanoelectronics,” IEDM Technical Digest, 2007, pp. 199-202.

13. R. Murali, and J.D. Meindl, “Modeling Process Variations Using a Compact Model,” Proceedings of the Workshop on Compact Modeling, May 2007, Santa Clara, CA.

14. R. Murali, E. Walters, F. Zaman, C. Tabor, W. Huang, M. El-Sayed, and J.D. Meindl, “Fabrication of Bowtie Nano-Gap Structures by Electron Beam Lithography,” Proceedings of Nanotech 2007, May 2007, Santa Clara, CA.

15. G. Lopez, R. Murali, R. Sarvari, K. Bowman, J. Davis, and J.D. Meindl, “The Impact of Size Effects and Copper Interconnect Process Variations on the Maximum Critical Path Delay of Single and Multi-Core Microprocessors,” Proceedings of the International Interconnect Technology Conference, June 2007, San Francisco, CA.

16. R. Murali, D. Brown, K. Martin, and J.D. Meindl, “Increased Sensitivity of Positive E-beam Resist by Pre-exposure to DUV radiation,” Proceedings of the Electron, Ion, Photon Beam and Nanotechnology Conference, May 2007, Denver, CO.

17. R. Murali, “Metrology Needs for Grayscale Lithography,” International Conference on Frontiers of Characterization and Metrology for Nanoelectronics, March 2007, Gaithersburg, MD.

18. S. Sassine, Y. Krupko, Z.D. Kvin, J.-C. Portal, R. Murali, K. Martin, G. Heill, and A.D. Wieck, “Polarized-microwave control of directed transport in a 2D electron gas with artificial asymmetrical scatterers,” Proceedings of the International Conference on Electronic Properties of Two-dimensional Systems and Modulated Semiconductor Structures 2007.

19. R. Murali, D.K. Brown, K.P. Martin, J.D. Meindl, “Process Optimization and Proximity Effect Correction for Grayscale E-beam Lithography,” Proceedings of the Electron Ion Photon Beam Technology and Nanofabrication Conference, 2006, pp. 340-341.

20. Q. Chen, L. Wang, R. Murali, and J. D. Meindl, “Compact, Physics-based Modeling of Nanoscale Limits of Double-Gate MOSFETs,” invited paper, Proceedings of the Workshop on Compact Modeling, Boston, MA, May 2004.

21. L. Wang, Q. Chen, R. Murali, and J. D. Meindl, “Quantum Mechanical Effects on CMOS SOC Performance,” IEEE International ASIC/SOC Conference, 2003, pp. 109-112.

22. R. Murali, L. Wang, B. L. Austin, and J. D. Meindl, “Scaled Accumulation FETs for Ultra-low power logic,” Proceedings of the IEEE International ASIC/SOC Conference, 2002, pp. 371-375.

23. R. Murali, L. Wang, B. L. Austin, and J. D. Meindl, “Low-power circuit advantages of the scaled accumulation FET,” IEEE International Symposium on Circuits and Systems, 2002, Vol. 5, pp. 201-204.

24. R. Murali, B. L. Austin, and J. D. Meindl, “A tick based methodology for rapid predictive circuit modeling,” IEEE International Symposium on Circuits and Systems, 2002, Vol. 3, pp. 791 -794.

Book Chapters

25. R. Murali, “Nanolithography” a chapter in Bio-Nano-Fluidic MEMS, Edited by P. Hesketh, Springer-Verlag, 2007.

26. R. Murali, “Fabrication of 3-D Microstructures,” a chapter in the NNIN Open Textbook, 2007.